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CMBT5551

Part No CMBT5551
Manufacturer Continental Device India Limited
Catalog END - OF - LIFE
Description SILICON NPN HIGH-VOLTAGE TRANSISTOR
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Manufacturer Continental Device India Limited
Win Source Part Number 1162236-CMBT5551
Manufacturer Homepage www.cdilsemi.com
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Ultra Librarian 3D Model Ultra Librarian CMBT5551 CAD Model

Description

The CMBT5551 is a high voltage NPN transistor manufactured by Continental Device India Limited (CDIL). It is designed for general purpose amplification and switching applications where high voltage operation is required. This transistor is housed in a small SOT-23 package, making it suitable for space-constrained applications in modern electronic devices.

Applications

  • High Voltage Switching
  • Amplification
  • Linear Regulators
  • Driver Stages
  • General Purpose Switching and Amplification

Features

  • High Voltage Capability: VCEO = 160V.
  • High Current Capability: IC = 600mA.
  • Low Saturation Voltage: VCE(sat) = 0.25V (typical).
  • High Transition Frequency: fT = 100 MHz (typical).
  • Small SOT-23 Package: Allows for high-density PCB designs.

Benefits

  • Suitable for High Voltage Applications: Can be used in circuits with voltage requirements up to 160V.
  • Efficient Switching: Low saturation voltage minimizes power dissipation during switching.
  • Versatile: Suitable for a wide range of amplification and switching applications.
  • Compact Design: Small package saves board space.
  • Reliable Performance: Provides consistent performance in various applications.

Additional Details

The CMBT5551 has a maximum power dissipation of approximately 330mW. The DC current gain (hFE) is typically between 80 and 250, depending on the collector current. The operating and storage temperature range is generally from -55°C to +150°C. This transistor is commonly used in telecom equipment, industrial control systems, and consumer electronics for switching and amplification purposes. It's crucial to refer to the datasheet for precise specifications, including the base-emitter voltage and collector cutoff current at different temperatures and voltages.

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