The BDX86A is a silicon NPN Darlington power transistor manufactured by Central Semiconductor Corp. It is designed for high-gain amplification and switching applications. This transistor is commonly used in power amplifiers, motor control circuits, and switching regulators.

Applications

• Power Amplifiers
• Motor Speed Control
• Switching Regulators
• Relay Drivers
• Solenoid Drivers

Features

• High DC Current Gain (hFE)
• Low Saturation Voltage
• High Collector-Emitter Breakdown Voltage
• NPN Darlington Configuration
• Through-Hole Mounting (TO-220 package)

Benefits

• Simplified circuit design due to high gain
• Efficient power utilization due to low saturation voltage
• Increased reliability and durability in demanding environments
• Easy to mount and heat sink
• Enhanced performance in high-power applications

Technical Specifications

The BDX86A features a collector-emitter breakdown voltage (VCEO) of 60V and a continuous collector current (IC) of 10A. The DC current gain (hFE) is typically 750 at an IC of 3A. The saturation voltage (VCE(sat)) is typically 2V at an IC of 5A. It has a power dissipation of 80W. The transistor is supplied in a TO-220 package, which allows for efficient heat dissipation. The operating and storage junction temperature range is -65°C to +150°C. The transistor is designed for general purpose amplifier and switching applications where high gain and power handling are required. It's robust design makes it suitable for industrial and commercial applications.