The HMC637BPM5E is a gallium arsenide (GaAs), monolithic microwave integrated circuit (MMIC), pseudomorphic high electron mobility transistor (pHEMT), cascode distributed power amplifier. The device is self biased in normal operation and features optional bias control for quiescent current (IDQ) adjustment and for second-order intercept (IP2) and third-order intercept (IP3) optimization. The amplifier operates from dc to 7.5 GHz, providing 15.5 dB of small signal gain, 28 dBm output power at 1 dB gain compression, a typical output IP3 of 39 dBm, and a 3.5 dB noise figure, while requiring 345 mA from a 12 V supply voltage (VDD). Gain flatness is excellent from dc to 7.5 GHz at ±0.5 dB typical, making the HMC637BPM5E ideal for military, space, and test equipment applications. The HMC637BPM5E also features inputs/outputs (I/Os) that are internally matched to 50 Ω, housed in a RoHS-compliant, 5 mm × 5 mm, premolded cavity, lead frame chip scale package (LFCSP), making the device compatible with high volume, surface-mount technology (SMT) assembly equipment.