The HMC453QS16G & HMC453QS16GE are high dynamic range GaAs InGaP Heterojunction Bipolar Transistor (HBT) 1.6 watt MMIC power amplifi ers operating between 0.4 and 2.2 GHz. Packaged in a miniature 16 lead QSOP plastic package, the amplifi er gain is typically 21.5 dB at 0.4 GHz and 8 dB at 2.1 GHz. Utilizing a minimum number of external components and a single +5V supply, the amplifi er output IP3 can be optimized to +47 dBm at 0.4 GHz or +51 dBm at 2.1 GHz. The power control (VPD) can be used for full power down or RF output power/ current control. The high output IP3 and PAE make the HMC453QS16G(E) ideal power amplifi ers for Cellular/PCS/3G, WLL, ISM and Fixed Wireless applications.