The HMC1113LP5ETR is a high-performance, GaAs, PHEMT, MMIC, Low Noise Amplifier (LNA) designed by Analog Devices Inc., a leader in the semiconductor industry. This state-of-the-art component is well-suited for a wide range of RF and microwave applications, including point-to-point radios, VSAT, military and space, test instrumentation, and sensors.
Key Features
- Frequency Range: The HMC1113LP5ETR operates over a broad frequency range, making it a versatile choice for various applications.
- High Gain: With its high gain performance, this LNA can effectively amplify weak signals without significant noise contribution.
- Low Noise Figure: The low noise figure of this amplifier ensures minimal signal degradation, which is critical for maintaining the integrity of the received signal in communication systems.
- Power Efficiency: It offers excellent power efficiency, which helps to reduce the overall power consumption of the system in which it is implemented.
- Robustness: Designed with reliability in mind, the HMC1113LP5ETR is built to withstand the demanding conditions of industrial and military applications.
Product Specifications
| Parameter |
Value |
| Frequency Range |
DC to 28 GHz |
| Gain |
13 dB Typical |
| Noise Figure |
2.5 dB Typical at 18 GHz |
| Output Power for 1 dB Compression (P1dB) |
19 dBm Typical at 18 GHz |
| Supply Voltage |
+3.3V to +5V |
| Package |
5x5 mm SMT Package |
Applications
The HMC1113LP5ETR is ideal for applications that require low noise amplification, such as satellite communications, radar systems, and wireless infrastructure. Its robust design and high performance make it a preferred choice for engineers and designers looking for a reliable LNA solution.
With its combination of high gain, low noise figure, and wide frequency range, the HMC1113LP5ETR from Analog Devices Inc. is a compelling choice for those in need of a cutting-edge low noise amplifier for their RF and microwave systems.