The HMC-APH596 is a two stage GaAs HEMT MMIC Medium Power Amplifi er which operates between 16 and 33 GHz. The HMC-APH596 provides17 dB of gain, and an output power of +24 dBm at 1 dB compression from a +5V supply voltage. All bond pads and the die backside are Ti/Au metallized and the amplifi er device is fully passivated for reliable operation. The HMC-APH596 GaAs HEMT MMIC Medium Power Amplifi er is compatible with conventional die attach methods, as well as thermocompression and thermosonic wirebonding, making it ideal for MCM and hybrid microcircuit applications. All data Shown herein is measured with the chip in a 50 Ohm environment and contacted with RF probes.