The ADPA7009-2 is a gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC), 0.5 W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20 GHz and 54 GHz. The amplifier provides a gain of 17.5 dB, an output power for 1 dB compression (OP1dB) of 28 dBm, and a typical output third-order intercept (OIP3) of 34.5 dBm at 20 GHz to 35 GHz. The ADPA7009-2 requires 850 mA from a 5 V supply voltage (VDDx). The RF input and outputs are internally matched and DC-blocked for ease of integration into higher level assemblies.