The AO8803L is a N-Channel enhancement mode MOSFET from Alpha & Omega Semiconductor. This MOSFET is designed for power management and load switching applications. It is particularly well-suited for applications requiring high efficiency and low on-resistance. The device leverages advanced trench technology to achieve optimal performance.

Applications

• Power Management
• Load Switching
• Battery Charging
• DC-DC Conversion

Features

• Low RDS(ON): RDS(ON) = 6.5mΩ (typ.) @ VGS = 10V
• Low Gate Charge: Qg = 13nC (typ.) @ VGS = 10V
• High Current Capability: ID = 8A
• Logic Level Gate Drive
• RoHS Compliant

Benefits

• High Efficiency: The low RDS(ON) minimizes conduction losses, resulting in higher overall efficiency in power management circuits.
• Logic Level Compatible: Can be driven directly by logic level signals, simplifying circuit design.
• Compact Design: Small footprint allows for use in space-constrained applications.

Additional Details

The AO8803L is available in a SO-8 package. It has a drain-source voltage (VDS) of 30V. The operating junction temperature range is -55°C to +150°C.