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AS1C1M16P-70BIN

Part No AS1C1M16P-70BIN
Manufacturer Alliance Memory, Inc.
Catalog DRAM
Description 16M 1Mx16 3V 70ns Pseudo
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category DRAM
Win Source Part Number 1447356-AS1C1M16P-70BIN
Manufacturer Alliance Memory, Inc.
Package Tray
Product Status Active
Memory Type Volatile
Memory Format PSRAM
Technology PSRAM (Pseudo SRAM)
Memory Size 16Mbit
Memory Organization 1M x 16
Memory Interface Parallel
Write Cycle Time - Word, Page 70ns
Access Time 70ns
Voltage - Supply 2.6V ~ 3.3V
Operating Temperature -40°C ~ 85°C (TA)
Grade -
Mounting Type Surface Mount
Package / Case 48-VFBGA
Supplier Device Package 48-FBGA (6x7)
Ultra Librarian 3D Model Ultra Librarian AS1C1M16P-70BIN CAD Model

Description

The AS1C1M16P-70BIN from Alliance Memory is a Pseudo SRAM (PSRAM) device designed for applications requiring high speed, high density and low power memory solutions. PSRAM combines attributes of both SRAM and DRAM to provide a highly efficient memory solution. This particular model features a 16M (1Mx16) configuration, operating at a nominal 3V and delivers access times as fast as 70 nanoseconds. Its pseudo-static nature means it behaves like SRAM but with DRAM-like densities, making it an ideal option for portable electronic devices where power efficiency and dense memory storage are critical. The AS1C1M16P-70BIN is tailored for a wide array of applications, including mobile phones, MP3 players, and other compact personal electronics, offering manufacturers a balance between performance and cost. Alliance Memory's dedication to maintaining legacy memory products ensures this PSRAM module offers a dependable solution for extending the lifecycle of products requiring this specific memory technology.

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