Applications:

• Switch-mode power supplies (SMPS)
• Power factor correction (PFC) circuits
• DC-DC converters
• Motor control
• Lighting ballasts

Features:

• High voltage: VDS = 700V
• Low on-resistance: RDS(on) = 1.35Ω (typical)
• Fast switching speed: Reduces switching losses
• Avalanche energy rated: Robust performance under avalanche conditions
• Lead-free and RoHS compliant

Benefits:

• Improved efficiency in power conversion applications due to low on-resistance and fast switching speed.
• Reduced power dissipation, leading to lower operating temperatures and improved system reliability.
• Simplified thermal management due to lower power dissipation.
• Enhanced system robustness due to avalanche energy rating.
• Environmentally friendly due to lead-free and RoHS compliance.

The AP10N70S MOSFET is designed to minimize conduction and switching losses, contributing to high efficiency in power conversion systems. Its high voltage rating makes it suitable for applications with high voltage requirements. The low on-resistance reduces conduction losses, while the fast switching speed minimizes switching losses. The avalanche energy rating ensures that the MOSFET can withstand transient voltage spikes and current surges without damage. This is especially important in applications where inductive loads are present. The lead-free and RoHS compliant construction makes the AP10N70S an environmentally friendly choice. This MOSFET is commonly used in switch-mode power supplies, where it switches the input voltage to generate a regulated output voltage. It is also used in power factor correction circuits to improve the power factor of AC-DC power supplies. Other applications include DC-DC converters, motor control, and lighting ballasts. The AP10N70S is available in a TO-220 package, which is a standard package for power MOSFETs.

Technical Specifications:

• Drain-Source Voltage (VDS): 700V
• Gate-Source Voltage (VGS): ±30V
• Continuous Drain Current (ID): 10A
• Pulsed Drain Current (IDM): 30A
• On-Resistance (RDS(on)): 1.35Ω (typical)
• Total Gate Charge (Qg): 14 nC (typical)
• Operating Temperature: -55°C to +150°C
• Package: TO-220