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Same model may have multiple batches, images only for reference.
AMTP65H150G4LSGB Advanced Power Electronics Corp. – Price, Stock & Datasheet
Same model may have multiple batches, images only for reference.

AMTP65H150G4LSGB

Part No AMTP65H150G4LSGB
Manufacturer Advanced Power Electronics Corp.
Catalog FETs - Single
Description GAN FET N-CH 650V 13A DFN8X8
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Package Bulk
Product Status Active
FET Type N-Channel
Technology GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss) 650 V
Current - Continuous Drain (Id) @ 25°C 13A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Max) @ Id, Vgs 180mOhm @ 10A, 10V
Vgs(th) (Max) @ Id 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs 8.8 nC @ 6 V
Vgs (Max) ±18V
Input Capacitance (Ciss) (Max) @ Vds 760 pF @ 400 V
Power Dissipation (Max) 52W (Tc)
Operating Temperature -55°C ~ 150°C (TJ)
Mounting Type Surface Mount
Supplier Device Package 4-DFN (8x8)
Package / Case 4-PowerTSFN
Ultra Librarian 3D Model Ultra Librarian AMTP65H150G4LSGB CAD Model

Description

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