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Same model may have multiple batches, images only for reference.
NXPSC08650BJ
Same model may have multiple batches, images only for reference.

NXPSC08650BJ

Part No NXPSC08650BJ
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 650V 8A D2PAK / Diode 650 V 8A Surface Mount D2PAK
Datasheet
NXPSC08650BJ Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr WeEn Semiconductors
Package Tape & Reel
Product Status Last Time Buy
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 230 µA @ 650 V
Capacitance @ Vr, F 260pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
Standard Package 800 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 929561-NXPSC08650BJ
Ultra Librarian 3D Model Ultra Librarian NXPSC08650BJ CAD Model

Description

The NXPSC08650BJ is a high-performance SiC (Silicon Carbide) Schottky diode designed for discrete semiconductor applications.

  • Voltage Rating: 650 V
  • Average Rectified Current: 8 A
  • Switching Speed: Fast-switching
  • Recovery Time: No recovery time
  • Forward Voltage Drop: 1.7 V @ 8 A
  • Reverse Recovery Time: 0 ns
  • Package: TO-263-3, D²Pak
  • Mounting: Surface mount
  • Operating Temperature: Up to 175°C
  • Status: Last time buy
  • Manufacturer: WeEn Semiconductors
  • Package: Tape & reel
  • Quantity: 800 pieces

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