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NXPSC08650BJ

Part No NXPSC08650BJ
Manufacturer WeEn Semiconductors
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARBIDE 650V 8A D2PAK / Diode 650 V 8A Surface Mount D2PAK
Datasheet
Sample
Rohs State Need to verify
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Single Diodes
Mfr WeEn Semiconductors
Package Tape & Reel
Product Status Last Time Buy
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 8A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 8 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 230 µA @ 650 V
Capacitance @ Vr, F 260pF @ 1V, 1MHz
Mounting Type Surface Mount
Package / Case TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package D2PAK
Operating Temperature - Junction 175°C (Max)
Base Product Number NXPSC
Standard Package 800 pcs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 929561-NXPSC08650BJ
Ultra Librarian 3D Model Ultra Librarian NXPSC08650BJ CAD Model

Description

The NXPSC08650BJ is a high-performance SiC (Silicon Carbide) Schottky diode designed for discrete semiconductor applications.

  • Voltage Rating: 650 V
  • Average Rectified Current: 8 A
  • Switching Speed: Fast-switching
  • Recovery Time: No recovery time
  • Forward Voltage Drop: 1.7 V @ 8 A
  • Reverse Recovery Time: 0 ns
  • Package: TO-263-3, D²Pak
  • Mounting: Surface mount
  • Operating Temperature: Up to 175°C
  • Status: Last time buy
  • Manufacturer: WeEn Semiconductors
  • Package: Tape & reel
  • Quantity: 800 pieces

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