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Same model may have multiple batches, images only for reference.
VS-C04ET07T-M3Vishay General Semiconductor - Diodes Division
Same model may have multiple batches, images only for reference.

VS-C04ET07T-M3

Part No VS-C04ET07T-M3
Manufacturer Vishay
Catalog Diodes, Rectifiers - Single
Description DIODE SIL CARB 650V 4A TO220AC
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Win Source Part Number WS1202331-VS-C04ET07T-M3
Win Source Part Number Cross
Manufacturer Vishay General Semiconductor - Diodes Division
Category Discrete Semiconductor Products Diodes Rectifiers Single Diodes
Package Tube
Product Status Obsolete
Technology SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) 650 V
Current - Average Rectified (Io) 4A
Voltage - Forward (Vf) (Max) @ If 1.7 V @ 4 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Ultra Librarian 3D Model Ultra Librarian VS-C04ET07T-M3 CAD Model

Description

The Vishay General Semiconductor - Diodes Division offers a fast recovery diode with a voltage rating of 650V and a current rating of 4A.

  • Technology: SiC (Silicon Carbide) Schottky
  • Voltage Rating: 650V
  • Current Rating: 4A
  • Recovery Time: Less than 500ns
  • Current Handling: Greater than 200mA
  • Package: Tube
  • Product Status: Obsolete

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Availability: 6,550 pieces
MOQ: 2 pcs
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