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VN0605T-T1-GE3

Part No VN0605T-T1-GE3
Manufacturer Vishay
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Manufacturer Vishay
Popularity Low
Supply and Demand Status Balance
Win Source Part Number 842019-VN0605T-T1-GE3
Ultra Librarian 3D Model Ultra Librarian VN0605T-T1-GE3 CAD Model

Description

The VN0605T-T1-GE3 is a single N-channel MOSFET from Vishay Semiconductors, designed for efficient power switching applications. This device is characterized by its low on-state resistance (RDS(on)), which minimizes power losses during operation, leading to improved energy efficiency and reduced heat dissipation.

Applications:

  • DC-DC converters
  • Load switching
  • Power management in portable devices
  • Motor control circuits

Features:

  • Low on-resistance (RDS(on)): Reduces conduction losses and improves efficiency.
  • Logic Level Gate Drive: Enables direct drive from low-voltage logic circuits.
  • TrenchFET® Power MOSFET: Provides high cell density for low RDS(on) and ruggedness.
  • Lead (Pb)-free and RoHS compliant: Meets environmental regulations.
  • Halogen-free: Meets environmental regulations.

Benefits:

  • Increased Energy Efficiency: Lower RDS(on) results in less power dissipation and greater efficiency.
  • Simplified Design: Logic-level gate drive simplifies interfacing with microcontrollers and other low-voltage control circuits.
  • Compact Footprint: Small package size allows for high-density circuit designs.
  • Improved Thermal Performance: Efficient heat dissipation contributes to enhanced system reliability.

The VN0605T-T1-GE3 features a drain-source voltage (VDS) rating of 60V and a continuous drain current (ID) rating dependent on the specific operating conditions and thermal management. Its low gate threshold voltage (VGS(th)) facilitates easy activation with low-voltage signals, making it suitable for battery-powered and logic-controlled applications. The device is typically supplied in a small surface-mount package, enabling efficient board assembly and space utilization.

Further details include a gate-source voltage rating of ±20V and a maximum power dissipation dependent on the ambient temperature and mounting method. The operating and storage temperature range is typically from -55°C to +150°C. This MOSFET is designed to provide reliable and efficient switching performance in a variety of power management and control applications.

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