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SISA88DN-T1-GE3

Part No SISA88DN-T1-GE3
Manufacturer Vishay
Catalog FETs - Single
Description MOSFET N-CH 30V 1212-8 PPAK
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Vishay Siliconix
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 30V
Current - Continuous Drain (Id) at 25°C 16.2A , 40.5A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 6.7mOhm at 10A, 10V
Vgs(th) (Maximum) at Id 2.4V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 25.5nC at 10V
Maximum Vgs +20V, -16V
Input Capacitance (Ciss) (Maximum) at Vds 985pF at 15V
Power Dissipation (Maximum) 3.2W , 19.8W (Tc)
Temperature Range - Operating -55°C ~ 150°C
Mounting Style SMD
Supplier Device Package PowerPAK 1212-8
Manufacturer Package PowerPAK 1212-8
Manufacturer Pack Quantity 3,000
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Limited
Win Source Part Number 811132-SISA88DN-T1-GE3
Ultra Librarian 3D Model Ultra Librarian SISA88DN-T1-GE3 CAD Model

Description

The Vishay Siliconix MOSFET is a high-performance electronic component designed for use in various applications.

  • Drain to Source Voltage (Vdss): 30V
  • Continuous Drain Current @ 25°C: 16.2A
  • Power Dissipation: 3.2W, 19.8W (Tc)
  • FET Type: MOSFET (Metal Oxide)
  • Maximum Rds On @ Id, Vgs: 6.7mOhm @ 10A, 10V
  • Maximum Vgs: +20V, -16V
  • Gate Charge (Qg) (Maximum) @ Vgs: 25.5nC @ 10V
  • Input Capacitance (Ciss) (Maximum) @ Vds: 985pF @ 15V
  • Package: PowerPAK 1212-8
  • Mounting Type: SMD
  • Temperature Range: -55°C to 150°C

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Pricing & Ordering

Quantity Unit Price Ext. Price
165+ $0.3094 $51.0510
350+ $0.2895 $101.3250
540+ $0.2795 $150.9300
775+ $0.2595 $201.1125
1,005+ $0.2496 $250.8480
1,255+ $0.2396 $300.6980
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 25,000 pieces
MOQ: 165 pcs
Order Increment : 1 pcs
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Shipped from HK warehouse
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