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UT75N03G-TN3-R

Part No UT75N03G-TN3-R
Manufacturer UTC
Catalog Electronic Wholesale
Description N-CHANNEL JUNCTIN SILICON FET
Sample
Rohs State rohs
ECAD Module
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Manufacturer UTC
Win Source Part Number 1278589-UT75N03G-TN3-R
Manufacturer Homepage www.utc-ic.com
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian UT75N03G-TN3-R CAD Model

Description

The UT75N03G-TN3-R is an N-channel enhancement-mode power MOSFET from UTC (Unisonic Technologies Co., Ltd.). It is designed for high-efficiency switching applications and features a low on-resistance, enabling efficient power conversion and minimizing power loss.

Applications:

  • DC-DC Converters: Used in various DC-DC conversion circuits for voltage regulation and power management.
  • Power Management in Portable Devices: Found in laptops, tablets, and smartphones for efficient power distribution.
  • Motor Control: Employed in motor control circuits to regulate the speed and torque of small motors.
  • LED Lighting: Used in LED drivers to control the current and brightness of LEDs.
  • Load Switching: Suitable for general-purpose load switching applications.

Features:

  • N-Channel Enhancement Mode: Simplifies gate drive requirements.
  • Low On-Resistance (RDS(on)): Reduces power loss and improves efficiency.
  • High Avalanche Capability: Offers robustness against voltage spikes.
  • Fast Switching Speed: Allows for high-frequency operation.
  • Lead-Free Finish: Complies with environmental regulations.

Benefits:

  • Increased Efficiency: Lower on-resistance minimizes conduction losses, leading to improved energy efficiency.
  • Reliable Performance: High avalanche capability ensures robust operation under transient conditions.
  • Simplified Design: N-channel enhancement mode reduces the complexity of gate drive circuitry.
  • Compact Size: Suitable for space-constrained applications.
  • Environmentally Friendly: Lead-free finish meets environmental standards.

Technical Specifications:

The UT75N03G-TN3-R typically features a drain-source voltage (VDS) rating of 30V, a gate-source voltage (VGS) rating of ±20V, and a continuous drain current (ID) rating of around 75A (depending on the specific package and operating conditions). The on-resistance (RDS(on)) is typically very low, often in the range of a few milliohms, contributing to its efficiency. The device is commonly available in a TO-252 package. Refer to the manufacturer's datasheet for precise specifications and operating curves.

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