The MMBT945G-P-AE3-R is an NPN epitaxial planar transistor manufactured by Unisonic Technologies Co., Ltd (UTC). It is designed for general-purpose switching and amplification applications, particularly in low-power circuits. This transistor is known for its low noise characteristics and is suitable for sensitive signal amplification. It is provided in a small SOT-323 package for surface mount applications, supporting compact and efficient circuit designs.

Applications:

• Low-noise amplifier circuits
• General-purpose switching
• Signal amplification
• Driver stages
• Audio amplification

Features:

• Low Noise Figure: Suitable for sensitive signal amplification.
• High Collector-Emitter Voltage (VCEO): Provides high voltage handling capability.
• High Collector Current (IC): Supports moderate current levels for driving loads.
• Surface Mount Package: Facilitates automated assembly and compact designs.
• Epitaxial Planar Structure: Ensures reliable performance and uniformity.

Benefits:

• Improved Signal Quality: Low noise figure enhances signal clarity in sensitive applications.
• Versatile Application: Suitable for a range of amplification and switching tasks.
• Efficient Performance: Optimized for low-power operation.
• Compact Design: Small SOT-323 package allows for space-saving circuit layouts.
• Reliable Operation: Epitaxial planar structure ensures consistent and stable performance.

Technical Specifications:

The MMBT945G-P-AE3-R features a collector-emitter voltage (VCEO) of 50V, a collector current (IC) of 150mA, and a noise figure of typically 4 dB. The transistor has a power dissipation of 200mW and operates over a temperature range of -55°C to +150°C. It is packaged in a SOT-323 surface mount package. This transistor is designed to provide low-noise amplification and efficient switching in a small form factor.