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Same model may have multiple batches, images only for reference.
TPN13008NH,L1Q Toshiba Semiconductor and Storage
Same model may have multiple batches, images only for reference.

TPN13008NH,L1Q

Part No TPN13008NH,L1Q
Manufacturer Toshiba Semiconductor and Storage
Catalog FETs - Single
Description MOSFET N-CH 80V 40A 8TSON
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Reel
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 80V
Id - Continuous Drain Current 18A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 13.3mOhm at 9A, 10V
Gate Source Voltage(th) (Maximum) at Id 4V at 200μA
Gate Charge (Qg) (Maximum) at Vgs 18nC at 10V
Gate Source Voltage (Maximum) ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1600pF at 40V
Power Dissipation (Maximum) 700mW, 42W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-TSON Advance (3.3x3.3)
Manufacturer Package 8-PowerVDFN
Manufacturer Pack Quantity 1
MSL Level 1 (Unlimited)
Win Source Part Number 757634-TPN13008NH,L1Q
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TPN13008NH,L1Q CAD Model

Description

The TPN13008NH,L1Q is an N-channel MOSFET from Toshiba Semiconductor and Storage.

  • Maximum Drain-Source Voltage: 80V
  • Continuous Drain Current: 18A
  • Features: low on-resistance, fast switching speed, and low gate charge.
  • Package: supplied in an 8-TSON Advance package and is RoHS compliant.
  • Suitable for: use in a wide range of applications, including power supplies, motor drives, and other high-current switching circuits.

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