The TPCF8002 is an N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is primarily designed for high-efficiency switching applications, particularly in DC-DC converters and power management circuits. Its key feature is a low on-resistance, minimizing power loss and improving overall system efficiency.

Applications

• DC-DC converters
• Load switching
• Power management in portable devices
• Synchronous rectification

Features

• N-channel MOSFET
• Low drain-source on-resistance (RDS(on))
• Fast switching speed
• Surface-mount package
• Lead-free

Benefits

• Improved power efficiency
• Reduced heat generation
• Suitable for high-frequency applications
• Compact design for space-constrained environments
• Environmentally compliant due to lead-free construction
• Enhanced thermal performance

Technical Specifications

The TPCF8002 features a drain-source voltage (VDS) rating of 30V and a continuous drain current (ID) rating of 7A. The RDS(on) is typically 17 mΩ at VGS = 10V and 25 mΩ at VGS = 4.5V. The gate-source threshold voltage (VGS(th)) ranges from 1.0V to 2.5V. It is available in a small LF(CM package, which is suitable for automated assembly. The device is RoHS compliant.

This MOSFET provides excellent switching performance and is ideal for applications requiring high efficiency and compact size. Its low on-resistance helps to minimize power losses, making it a suitable choice for a variety of power management designs.