The TK5P60V is a silicon N-channel MOSFET manufactured by Toshiba Semiconductor and Storage. It is designed for high-voltage, high-power switching applications. This MOSFET leverages Toshiba's advanced process technology to achieve low on-resistance and fast switching speeds, resulting in improved efficiency and reduced power loss in a variety of electronic circuits.

Applications

• Switching Mode Power Supplies (SMPS)
• Power Factor Correction (PFC) circuits
• DC-DC Converters
• Uninterruptible Power Supplies (UPS)
• Motor Control

Features

• Low On-Resistance (RDS(on)): Minimizes conduction losses, resulting in higher efficiency.
• High-Speed Switching: Reduces switching losses, enabling higher frequency operation.
• High Avalanche Energy: Provides robustness against voltage transients and inductive loads.
• Enhancement Mode: Simplifies gate drive circuitry.
• RoHS Compliant: Compliant with RoHS directives, ensuring environmental responsibility.

Benefits

• Improved Power Efficiency: Low RDS(on) and fast switching contribute to significant reductions in power dissipation.
• Reduced Heat Generation: Lower power losses mean less heat, simplifying thermal management and improving system reliability.
• Enhanced System Reliability: The high avalanche energy rating provides added protection against voltage spikes, enhancing system durability.
• Simplified Circuit Design: Enhancement mode operation simplifies gate drive requirements, lowering component count and cost.
• Environmentally Friendly: RoHS compliance ensures the device is free from hazardous substances, meeting environmental regulations.

Technical Specifications

• Drain-Source Voltage (VDSS): 600V
• Gate-Source Voltage (VGSS): ±30V
• Continuous Drain Current (ID): 5A
• Pulsed Drain Current (IDM): 15A
• Maximum Power Dissipation (PD): 41W
• Operating Temperature Range: -55°C to 150°C
• RDS(on) (VGS=10V): 1.45 Ohms (typical)
• Gate Charge (Qg): 10 nC (typical)
• Package: TO-220SIS

The TK5P60V MOSFET provides a robust and efficient solution for a variety of power switching applications. Its combination of low on-resistance, fast switching speed, and high avalanche energy make it an excellent choice for designers seeking to improve power efficiency and system reliability.