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Same model may have multiple batches, images only for reference.
TH58NYG3S0HBAI4 Real Image
Same model may have multiple batches, images only for reference.

TH58NYG3S0HBAI4

Part No TH58NYG3S0HBAI4
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Description 8GB SLC NAND 24NM BGA 9X11 3.3V
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Toshiba Semiconductor and Storage
Memory Type Non-Volatile
Memory Format FLASH
Technology FLASH - NAND (SLC)
Memory Size 8Gb (1G x 8)
Memory Interface Parallel
Write Cycle Time - Word, Page 25ns
Access Time 25ns
Supply Voltage (V) 1.7V ~ 1.95V
Temperature Range - Operating -40°C ~ 85°C
Mounting Style SMD
Manufacturer Package 63-VFBGA
Supplier Device Package 63-TFBGA (9x11)
Manufacturer Pack Quantity 210
MSL Level 3 (168 Hours)
Popularity Low
Supply and Demand Status Limited
Win Source Part Number 813031-TH58NYG3S0HBAI4
Ultra Librarian 3D Model Ultra Librarian TH58NYG3S0HBAI4 CAD Model

Description

The Toshiba Semiconductor and Storage TH58NYG3S0HBAI4 is a non-volatile 8Gb (1G x 8) FLASH-NAND (SLC) memory type.

  • Access Time: 25ns
  • Mounting: SMD
  • Package: 63-TFBGA (9x11)
  • Temperature Range: -40°C to 85°C
  • Memory Format: FLASH
  • Write Cycle Time: 25ns (word or page)
  • Memory Interface: Parallel
  • Manufacturing Origin: Japan
  • Supply and Demand Status: Limited
  • Manufacturer Pack Quantity: 210
  • MSL Level: 3 (168 hours)
  • Supply Voltage: 1.7V to 1.95V

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74+ $3.4076 $252.1624
99+ $3.0551 $302.4549
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