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TC55V2001ST-10LT

Part No TC55V2001ST-10LT
Manufacturer Toshiba Semiconductor and Storage
Catalog Unclassified Memory
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Integrated Circuits(ICs)
Family Memory
Win Source Part Number 196708-TC55V2001ST-10LT
Popularity Low
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC55V2001ST-10LT CAD Model

Description

The TC55V2001ST-10LT is a high-speed, low-power 2-megabit static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. It is organized as 256K words by 8 bits. This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for various embedded systems and memory-intensive tasks. The -10LT designation indicates a specific access time of 10ns (very fast) and likely refers to a low-power variant.

Applications

  • Embedded systems requiring extremely fast memory access
  • Cache memory in high-performance microprocessors
  • Buffer memory in high-speed data acquisition systems
  • Digital signal processing (DSP) applications where speed is critical
  • High-performance computing and networking equipment

Features

  • Extremely High-speed access time (10ns)
  • Low power consumption
  • Single 3.3V power supply
  • TTL compatible inputs and outputs
  • Operating temperature: -40°C to 85°C
  • Package: TSOP package for surface mount applications

Benefits

  • Exceptionally fast data retrieval speeds optimize system performance in time-critical applications.
  • Low power consumption extends battery life in portable devices.
  • Easy integration with other digital components due to TTL compatibility.
  • Reliable operation in harsh environments due to wide operating temperature range.
  • Compact design due to TSOP packaging which saves board space.

Additional Details

The TC55V2001ST-10LT utilizes advanced CMOS technology to achieve very high speed and low power operation. It typically features address latches, chip enable inputs, and output enable controls to facilitate easy memory expansion and control. The device offers stable performance across its operating temperature range. It also incorporates built-in protection circuits against electrostatic discharge (ESD).

Detailed specifications include parameters such as standby current, operating current, input capacitance, output capacitance, and various timing characteristics. Consult the official Toshiba datasheet for precise electrical characteristics and application guidelines.

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