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TC55257DTRL-85L

Part No TC55257DTRL-85L
Manufacturer Toshiba Semiconductor and Storage
Catalog RAM
Description 32,768 WORD-8 BIT STATIC RAM
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Integrated Circuits(ICs)
Family Memory
Win Source Part Number 196624-TC55257DTRL-85L
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian TC55257DTRL-85L CAD Model

Description

The TC55257DTRL-85L is a high-speed, low-power 262,144-bit static RAM (SRAM) manufactured by Toshiba Semiconductor and Storage. It is organized as 32,768 words by 8 bits. This SRAM is designed for applications requiring fast access times and low power consumption, making it suitable for various memory-intensive tasks.

Applications:

  • Cache memory for microprocessors
  • Buffer memory for data acquisition systems
  • Image processing
  • Digital signal processing (DSP)
  • Industrial control systems

Features:

  • High-speed access time: 85 ns
  • Low power consumption: This SRAM is designed for battery-backed applications or systems where power conservation is critical.
  • Single 5V power supply
  • TTL compatible inputs and outputs
  • Three-state output
  • Fully static operation: No clock or refresh required, simplifying system design.
  • Operating Temperature: Typically available in industrial temperature ranges.

Benefits:

  • Improved system performance due to fast access times.
  • Reduced power consumption, leading to longer battery life or lower overall system power requirements.
  • Simplified system design due to fully static operation.
  • High reliability and data retention.

Additional Details:

The TC55257DTRL-85L is available in a variety of packages, including DIP and SOIC. The specific package type affects the overall dimensions and pinout of the device. This SRAM is commonly used in embedded systems and other applications where high performance and low power consumption are essential. The 85ns access time allows for rapid data retrieval, enhancing overall system responsiveness. The 'L' suffix typically indicates a low-power version of the SRAM.

The memory cell is designed to minimize its area and current consumption. The static design means that data is retained as long as power is applied, without the need for refresh cycles. This significantly simplifies the memory controller logic and reduces system overhead. It's used where fast and reliable data storage is needed, such as in networking equipment, industrial controllers, and various consumer electronics.

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