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TC514400ASJ-60

Part No TC514400ASJ-60
Manufacturer Toshiba Semiconductor and Storage
Catalog RAM
Description 1,048,576 x 4 BIT DYNAMIC RAM
Sample
Rohs State Need to verify
ECAD Module
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Manufacturer Toshiba Semiconductor and Storage
Category Integrated Circuits(ICs)
Family Memory
Win Source Part Number 196471-TC514400ASJ-60
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian TC514400ASJ-60 CAD Model

Description

The TC514400ASJ-60 is a 4,194,304-bit dynamic random-access memory (DRAM) chip manufactured by Toshiba Semiconductor and Storage. It's organized as 419,430 words x 10 bits. This DRAM is used in systems requiring fast access to data and reliable storage capabilities. The '-60' indicates an access time of 60 nanoseconds, making it a relatively fast memory component.

Applications

  • Main memory for older computers and workstations
  • Graphics memory for video cards
  • Cache memory in high-performance systems
  • Memory for embedded systems requiring significant RAM
  • Industrial control systems

Features

  • Organization: 419,430 words x 10 bits (4,194,304 bits)
  • Access Time: 60 ns
  • Package: Likely a SOJ (Small Outline J-lead) package
  • Refresh: Requires periodic refresh cycles to maintain data
  • Operating Voltage: Typically 5V
  • High-speed data transfer

Benefits

  • Provides fast access to data, improving system performance
  • Offers reliable data storage, ensuring data integrity
  • Suitable for high-performance applications due to its speed
  • Compact package allows for integration into various systems
  • Cost-effective solution for memory-intensive tasks

Additional Details

The TC514400ASJ-60 DRAM requires periodic refresh cycles to maintain the stored data due to the nature of its dynamic storage cells. The refresh operation involves reading and rewriting the data in each memory cell. The specific refresh modes (auto-refresh, self-refresh) depend on the system requirements. Consult the datasheet for precise operating characteristics and timing requirements. Proper decoupling capacitors are essential for stable operation and to minimize noise. Being a DRAM, it typically uses multiplexed address inputs to reduce pin count, utilizing external control signals for row and column address strobes (RAS and CAS). The device is designed for applications where quick data retrieval and robust data storage are crucial.

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