The TC511000AZ-70 is a 1,048,576-bit static random-access memory (SRAM) manufactured by Toshiba Semiconductor and Storage. This SRAM offers a balance of speed and power consumption, making it suitable for a variety of applications. The memory is organized as 131,072 words by 8 bits.

Applications

• Embedded systems requiring moderate speed and low power
• Battery-powered devices
• Data logging applications
• Portable test equipment
• Industrial control systems

Features

• Access time: 70 ns
• Low power consumption
• Single 5V power supply
• TTL compatible inputs and outputs
• Fully static operation (no clock required)
• Available in a standard DIP or SOJ package
• Data retention voltage: 2V (min)

Benefits

• Suitable for applications where moderate speed is sufficient
• Low power consumption extends battery life in portable devices
• Simple interface simplifies system design
• Reliable data storage
• Easy integration into various systems

Additional Details

The TC511000AZ-70 is fabricated using CMOS technology. The fully static operation eliminates the need for external refresh circuitry. The SRAM operates from a single 5V power supply and offers TTL-compatible I/O, ensuring compatibility with standard logic devices. Available package options include DIP and SOJ. The operating temperature range is typically 0°C to 70°C. Further specifications include standby current and operating current values, which are critical for power-sensitive applications.