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Same model may have multiple batches, images only for reference.
GT50J121
Same model may have multiple batches, images only for reference.

GT50J121

Part No GT50J121
Manufacturer Toshiba Semiconductor and Storage
Catalog IGBTs - Single
Description IGBT 600V 50A 240W TO3P LH
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Categories Discrete Semiconductor Products
Manufacturer Toshiba Semiconductor and Storage
Packaging Tube/Rail
Status Obsolete(EOL)
VCEO Maximum Collector-Emitter Breakdown Voltage 600V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.45V @ 15V, 50A
Maximum Power Dissipation 240W
Total Switching Energy(Ets) 1.3mJ (on), 1.34mJ (off)
Input Type Standard
Turn-on and Turn-off delay time 90ns/300ns
Testing Conditions 300V, 50A, 13 Ohm, 15V
Temperature Range - Operating 150°C (TJ)
Mounting Through Hole
Case / Package TO-3P(LH)
Win Source Part Number 204503-GT50J121
Popularity Medium
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian GT50J121 CAD Model

Description

The Toshiba GT50J121 is a through hole mounting IGBT transistor designed for use in discrete semiconductor products.

  • Collector-Emitter Breakdown Voltage: 600V
  • Maximum Collector Current: 50A
  • Maximum Power Dissipation: 240W
  • Pulsed Collector Current: 100A
  • Collector-Emitter Saturation Voltage: 2.45V @ 15V and 50A
  • Total Switching Energy: 1.3mJ (on) / 1.34mJ (off)
  • Turn-On/Turn-Off Delay Time: 90ns / 300ns
  • Testing Conditions: 300V, 50A, 13 Ohm, 15V

Supply and demand status is limited due to its obsolete(EOL) status.

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