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Categories Discrete Semiconductor Products
Manufacturer STMicroelectronics
Packaging Tube
Status Obsolete
Transistor Polarity N-Channel
Technology MOSFET
Vds - Drain-Source Breakdown Voltage 600V
Id - Continuous Drain Current 35A
Drive Voltage (Max Rds On, Min Rds On) 10V
Rds On (Maximum) at Id, Vgs 88mOhm at 17.5A, 10V
Gate Source Voltage(th) (Maximum) at Id 5V at 250μA
Gate Charge (Qg) (Maximum) at Vgs 130nC at 10V
Gate Source Voltage (Maximum) ±30V
Input Capacitance (Ciss) (Maximum) at Vds 4200pF at 50V
Power Dissipation (Maximum) 255W
Temperature Range - Operating 150°C
Mounting Style Through Hole
Supplier Device Package TO-247-3
Manufacturer Package TO-247-3
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 1262366-STW43NM60N
Manufacturer Homepage www.st.com
Is this a common-used part? Yes
Popularity High
Supply and Demand Status Limited
Ultra Librarian 3D Model Ultra Librarian STW43NM60N CAD Model

Description

The STW43NM60N is a high-performance N-channel Power MOSFET presented by STMicroelectronics, a leader in the semiconductor industry. This MOSFET is a part of the MDmesh™ DM2 series, which is renowned for its excellent efficiency in high-voltage applications. The STW43NM60N is designed to meet the rigorous demands of modern electronic circuits, providing a combination of low on-resistance and high switching speed.

Key Features:

  • High Voltage Capability: With a drain-source voltage (V<sub>DS) of 600 V, the STW43NM60N is suitable for a wide range of applications, including power supplies and converters that operate at high voltages.
  • Low On-Resistance: The device boasts an extremely low on-resistance (R<sub>DS(on)) of typically 0.033 ohms, which translates to reduced conduction losses and improved overall efficiency.
  • High Current Rating: It can handle a continuous drain current (I<sub>D) of 40 A, making it capable of driving high-current loads with ease.
  • MDmesh™ DM2 Technology: This technology combines a vertical structure with a new proprietary diffusion process, enabling the MOSFET to achieve low on-resistance and reduced gate charge, which enhances the switching performance.
  • Reduced Gate Charge: A low gate charge (Q<sub>g) minimizes switching losses, allowing for faster switching operations and better performance in high-frequency applications.
  • 100% Avalanche Tested: Each unit is rigorously tested for avalanche ruggedness, ensuring reliability and robustness in harsh conditions.

Applications:

The STW43NM60N is ideal for an array of applications, including:

  • Switch Mode Power Supplies (SMPS)
  • LED Lighting
  • High-Efficiency DC-DC Converters
  • Welding Equipment
  • Uninterruptible Power Supplies (UPS)
  • Motor Control

With its combination of high voltage capability, low on-resistance, and high current handling, the STW43NM60N Power MOSFET from STMicroelectronics is a robust and efficient solution for designers looking to improve the performance and reliability of their high-voltage power management systems.

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Pricing & Ordering

Quantity Unit Price Ext. Price
11+ $6.4007 $70.4077
25+ $5.2520 $131.3000
39+ $5.0877 $198.4203
53+ $4.9234 $260.9402
68+ $4.7604 $323.7072
91+ $4.2675 $388.3425
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
Availability: 26,400 pieces
MOQ: 11 pcs
Order Increment : 1 piece
*Need More Quantity? *Request a Bulk Quantity Quotation?

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