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STPSC10H12B-TR1

Part No STPSC10H12B-TR1
Manufacturer STMicroelectronics
Catalog Diodes, Rectifiers - Single
Sample
Rohs State Need to verify
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Mfr STMicroelectronics
Series ECOPACK®
Package Tape & Reel
Product Status Obsolete
Diode Type Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max) 1200 V
Current - Average Rectified (Io) 10A
Voltage - Forward (Vf) (Max) @ If 1.5 V @ 10 A
Speed No Recovery Time > 500mA (Io)
Reverse Recovery Time (trr) 0 ns
Current - Reverse Leakage @ Vr 60 µA @ 1200 V
Capacitance @ Vr, F 725pF @ 0V, 1MHz
Mounting SMD (SMT)
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Operating Temperature - Junction -40°C ~ 175°C
Base Product Number STPSC10
Other Names 497-17243-6,497-17243-1,497-17243-2
Standard Package 2,500
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 1281990-STPSC10H12B-TR1
Ultra Librarian 3D Model Ultra Librarian STPSC10H12B-TR1 CAD Model

Description

STPSC10H12B-TR1 Silicon Carbide Diode from STMicroelectronics

The STPSC10H12B-TR1 is a cutting-edge Silicon Carbide (SiC) Schottky diode, expertly manufactured by STMicroelectronics, a global semiconductor leader. This diode is specifically designed to offer superior performance in applications requiring high efficiency, robustness, and compactness. With its unique material properties, the STPSC10H12B-TR1 stands out as an ideal choice for high-frequency power converters, photovoltaic systems, and electric vehicle (EV) charging stations.

Key Features and Benefits:

  • High Switching Efficiency: The SiC material used in the STPSC10H12B-TR1 diode allows for negligible switching losses, making it highly efficient for high-frequency applications.
  • Low Forward Voltage Drop: This diode offers a low forward voltage drop, which translates to reduced conduction losses and improved thermal performance.
  • High-Temperature Operation: With its ability to operate at higher temperatures than traditional silicon diodes, the STPSC10H12B-TR1 is suitable for demanding environments and reduces the need for extensive cooling systems.
  • Robustness: The device is designed to be robust against surge currents and features a high avalanche capability, ensuring reliability and longevity in harsh conditions.
  • Compact Design: The surface-mount package allows for a compact design, making it an excellent choice for space-constrained applications.

Applications:

The versatility of the STPSC10H12B-TR1 makes it an excellent choice for a wide range of applications, including:

  • Power supplies and adapters
  • Solar inverters
  • On-board chargers and charging stations for electric vehicles
  • Power factor correction circuits
  • DC-DC converters

The STPSC10H12B-TR1 is a testament to STMicroelectronics' commitment to providing advanced semiconductor solutions that meet the evolving needs of the electronics industry. By integrating this SiC diode into your design, you can expect improved efficiency, reliability, and performance, ultimately leading to more innovative and competitive end products.

For detailed technical specifications, application notes, and support resources, please refer to the official STMicroelectronics website or contact their support team for further assistance.

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