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Same model may have multiple batches, images only for reference.
GPA020A120MN-FD Real Image
Same model may have multiple batches, images only for reference.

GPA020A120MN-FD

Part No GPA020A120MN-FD
Manufacturer SemiQ
Catalog IGBTs - Single
Description IGBT 1200V 40A 223W TO3PN  /  IGBT Trench Field Stop 1200 V 40 A 223 W Through Hole TO-3PN
Datasheet
GPA020A120MN-FD Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr SemiQ
Package Tube
Product Status Obsolete
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 40 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 20A
Power - Max 223 W
Switching Energy 2.8mJ (on), 480µJ (off)
Input Type Standard
Gate Charge 210 nC
Td (on/off) @ 25°C 30ns/150ns
Test Condition 600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr) 425 ns
Temperature Range - Operating -55°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Supplier Device Package TO-3PN
MSL Level 1 (Unlimited)
REACH Status REACH Affected
ECCN EAR99
HTSUS 8541.29.0095
Other Names 1560-1216-1,1560-1216-1-ND,1560-1216-2,1560-1216-2-ND,1560-1216-2INACTIVE,1560-1216-5
Standard Package 1
Win Source Part Number 1060981-GPA020A120MN-FD
Ultra Librarian 3D Model Ultra Librarian GPA020A120MN-FD CAD Model

Description

The 1060981-GPA020A120MN-FD is an IGBT transistor with a trench field stop IGBT type.

  • Collector-Emitter Breakdown Voltage: 1200V
  • Collector Current: 40A
  • Power Max: 223W
  • Reverse Recovery Time: 425ns
  • Switching Energy (On): 2.8mJ
  • Switching Energy (Off): 480μJ
  • Gate Charge: 210nC
  • td (on/off) @ 25°C: 30ns/150ns
  • Package: TO-3P-3, SC-65-3
  • Supplier Device Package: TO-3PN
  • Operating Temperature: -55°C to 150°C
  • ECCN: EAR99.29.0095

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