The K5W1G12ACM-BL60TNO is a 1Gb (Gigabit) Mobile DDR SDRAM (Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It's designed for low-power, high-performance memory applications, commonly found in mobile devices and embedded systems.
Applications
- Smartphones
- Tablets
- Wearable devices
- Digital cameras
- Portable media players
Features
- 1Gb (128MB) density
- Mobile DDR (LPDDR) technology for low power consumption
- x16 data bus width
- Operating Voltage: 1.8V/1.2V
- Operating temperature range: -25°C to +85°C
- 60 ball FBGA (Fine-Pitch Ball Grid Array) package
Benefits
- High memory capacity for demanding applications
- Extended battery life in portable devices
- Fast data access speeds for smooth performance
- Compact form factor for space-constrained designs
- Reliable operation in various environmental conditions
Additional Details
The K5W1G12ACM-BL60TNO utilizes Mobile DDR (LPDDR) technology to minimize power consumption, making it ideal for battery-powered devices. The 1Gb density provides ample memory for running multiple applications and storing large files. The x16 data bus width enables fast data transfer rates, enhancing system performance. The 60-ball FBGA package offers a compact and reliable connection to the host device. The specific speed grade and timing parameters can be found in the official Samsung datasheet for this part number. The device supports various power-saving modes to further reduce energy consumption. The address and control signals are multiplexed to minimize the number of pins required. This memory chip is crucial for providing the necessary memory resources in a wide range of mobile and embedded applications. Its low-power characteristics and high performance make it a popular choice for manufacturers of portable electronic devices.