The K4T51163QI-HIE7 is a 512Mb DDR2 SDRAM (Double Data Rate 2 Synchronous Dynamic Random-Access Memory) chip manufactured by Samsung. It is designed for applications requiring moderate memory capacity and high bandwidth, such as embedded systems, mobile devices, and consumer electronics.

Applications:

• Embedded systems
• Mobile devices (e.g., smartphones, tablets)
• Consumer electronics (e.g., digital cameras, set-top boxes)
• Networking devices
• Automotive infotainment systems

Features:

• 512Mb (32M x 16) memory organization
• DDR2 interface: Double data rate operation for high bandwidth
• Data transfer rates up to 800 Mbps
• Operating voltage: 1.8V
• 4 internal banks for concurrent operation
• Write latency of 0 or 1 clock cycles
• 4n prefetch architecture
• On-Die Termination (ODT)
• Lead-free and RoHS compliant

Benefits:

• High memory bandwidth for demanding applications
• Low operating voltage for reduced power consumption
• Improved system performance with 4 internal banks
• Simplified system design with ODT
• Environmentally friendly with lead-free and RoHS compliance

Additional Details:

The K4T51163QI-HIE7 is a key component in DDR2 memory systems. The 4 internal banks allow for concurrent operation, increasing memory throughput. The On-Die Termination (ODT) feature reduces signal reflections and improves signal integrity, particularly at high data rates. The chip operates at 1.8V, which reduces power consumption and heat dissipation. It uses a 4n prefetch architecture to enable high-speed data access.

The part is designed to meet the stringent requirements of embedded and mobile applications. The operating temperature range is specified to meet the needs of various environments. It is available in a FBGA (Fine-Pitch Ball Grid Array) package for ease of surface mounting on PCBs.