The Samsung K4T1G164QF-HCE6 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component. This is a 1Gb memory chip, organized as 64M x 16. It is designed for applications where high bandwidth and relatively low latency are required. The HCE6 suffix specifies speed and timing.

Applications

• Desktop and laptop computers
• Servers
• Networking equipment
• Graphics cards
• Gaming consoles
• Embedded systems

Features

• DDR3 technology
• Capacity: 1Gb (64M x 16)
• Data transfer rates (HCE6 determines specific speed)
• 8-bit prefetch architecture
• Double data rate architecture: two data transfers per clock cycle
• Differential clock inputs (CK, /CK)
• Command Address entry mask (CKE)
• On-chip termination (ODT)
• Write leveling
• Lead-free and RoHS compliant

Benefits

• Increased system performance due to high memory bandwidth.
• Improved responsiveness and reduced latency.
• Enhanced multitasking.
• Lower power consumption compared to previous DDR generations.
• Stable and reliable operation.

Additional Details

The K4T1G164QF-HCE6 operates at 1.5V. The component is packaged in a FBGA for compact size. The integrated on-die termination (ODT) and write leveling features improve signal integrity and ensure reliable data transfers at high speeds.