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K4P2E304EQ-PGC2T00

Part No K4P2E304EQ-PGC2T00
Manufacturer Samsung
Catalog DDR
Description LPDDR2 3x(4Gb) 216b PoP 35nm Q-die CS
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 943310-K4P2E304EQ-PGC2T00
Series *
Ultra Librarian 3D Model Ultra Librarian K4P2E304EQ-PGC2T00 CAD Model

Description

The Samsung K4P2E304EQ-PGC2T00 is a high-performance LPDDR4 (Low Power Double Data Rate 4) SDRAM (Synchronous Dynamic Random-Access Memory) component. It's designed for mobile and embedded applications where low power consumption and high bandwidth are critical.

Applications

  • Smartphones
  • Tablets
  • Wearable devices
  • Automotive infotainment systems
  • Mobile computing devices
  • Networking devices

Features

  • LPDDR4 technology for low power and high performance
  • Capacity of 2GB (1Gx16)
  • High data transfer rates (PGC2 indicates speed grade)
  • 16-bit prefetch architecture
  • Double data rate architecture: two data transfers per clock cycle
  • Low voltage operation
  • On-chip termination (ODT)
  • Write leveling
  • Lead-free and RoHS compliant
  • Operating temperature range: -30°C to +85°C

Benefits

  • Extended battery life in portable devices
  • Improved system performance for demanding applications
  • Enhanced responsiveness and reduced latency
  • Stable and reliable operation
  • Reduced heat generation

Additional Details

The K4P2E304EQ-PGC2T00 operates at a very low voltage (typically 1.1V or lower) to minimize power consumption. The integrated on-die termination (ODT) improves signal integrity and reduces reflections on the memory bus. Its write leveling feature is important for ensuring data integrity, particularly at high speeds. The component is available in a compact package suitable for mobile devices. The LPDDR4 interface offers a significant improvement in power efficiency and bandwidth compared to previous LPDDR generations.

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