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K4B2G1646E-HCH9

Part No K4B2G1646E-HCH9
Manufacturer Samsung
Catalog DDR
Description DDR3-1333 128Mx16 (2Gb)
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941246-K4B2G1646E-HCH9
Series *
Ultra Librarian 3D Model Ultra Librarian K4B2G1646E-HCH9 CAD Model

Description

The Samsung K4B2G1646E-HCH9 is a DDR3 SDRAM (Synchronous Dynamic Random-Access Memory) component designed for high-performance computing and memory-intensive applications. Manufactured by Samsung, a leader in memory technology, this chip provides a balance of speed, capacity, and reliability.

Applications:

  • Desktop PCs: Serves as the primary system memory, enhancing overall performance and responsiveness for various applications.
  • Laptop Computers: Integrated to provide sufficient memory capacity for efficient multitasking and smooth operation of applications and operating systems.
  • Gaming Consoles: Used to support high-resolution graphics, complex game logic, and fast loading times, ensuring a seamless gaming experience.
  • Networking Devices: Employed in routers, switches, and other networking equipment to manage data traffic effectively and improve network performance.
  • Embedded Systems: Integrated into embedded systems requiring high-speed and reliable memory, such as industrial control systems and automotive electronics.

Features:

  • High-Speed Data Transfer: Delivers fast data transfer rates, significantly improving system responsiveness and application loading times.
  • Low Power Consumption: Operates at a reduced voltage, minimizing power consumption and heat generation, contributing to energy efficiency.
  • Double Data Rate (DDR) Technology: Transfers data on both the rising and falling edges of the clock signal, effectively doubling the data transfer rate.
  • High Density: Offers a large memory capacity in a compact package, maximizing space utilization and enabling higher performance in smaller devices.
  • Advanced Packaging: Employs advanced packaging techniques to ensure signal integrity, thermal management, and overall reliability.

Benefits:

  • Improved System Performance: Enhances the speed and responsiveness of computer systems, leading to faster application execution and smoother multitasking.
  • Increased Multitasking Capability: Allows users to run multiple applications simultaneously without experiencing significant performance degradation.
  • Enhanced Gaming Experience: Provides smoother gameplay, faster loading times, and improved graphics rendering for a more immersive gaming experience.
  • Stable System Operation: Ensures reliable performance and reduces the risk of system crashes and data loss, enhancing overall system stability.
  • Extended Battery Life: Contributes to longer battery life in portable devices such as laptops and tablets by minimizing power consumption.

Additional Details:

The K4B2G1646E-HCH9 complies with the JEDEC standards for DDR3 SDRAM. Detailed technical specifications, including operating frequency, timings, and voltage requirements, can be found in the official Samsung datasheet for this part number. This memory chip is manufactured using high-quality materials and undergoes rigorous testing to ensure optimal performance and reliability under various operating conditions.

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