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K4B1G1646G-BCK0T00

Part No K4B1G1646G-BCK0T00
Manufacturer Samsung
Catalog DDR
Description DDR3-1600 64Mx16 (1Gb) FBGA
Sample
Rohs State rohs
ECAD Module
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Categories Memory
Win Source Part Number 941725-K4B1G1646G-BCK0T00
Series *
Ultra Librarian 3D Model Ultra Librarian K4B1G1646G-BCK0T00 CAD Model

Description

The K4B1G1646G-BCK0T00 is a DDR3 SDRAM chip manufactured by Samsung. This memory component is designed for a wide range of applications where high-speed data access and low latency are crucial. Commonly used in computers, embedded systems, and other devices that require efficient and dependable memory performance.

Applications

  • Desktop Computers: Serves as the main system memory, facilitating the execution of applications and the operating system.
  • Laptop Computers: Provides essential memory for portable computing, enabling smooth multitasking and application performance.
  • Embedded Systems: Integrated into a variety of embedded applications, including networking devices, industrial control systems, and consumer electronics.
  • Gaming Consoles: Improves gaming performance by providing fast access to game data and textures.
  • Networking Equipment: Supports memory requirements for routers, switches, and other networking devices, ensuring efficient data transfer.

Features

  • DDR3 Technology: Utilizes DDR3 technology, offering higher bandwidth and reduced power consumption compared to previous DDR generations.
  • 1Gb Density: Offers a significant memory capacity in a compact package, optimizing space utilization in various applications.
  • High-Speed Data Transfer: Supports high-speed data transfer rates, enhancing overall system responsiveness and data processing capabilities.
  • Low Voltage Operation: Operates at a low voltage, minimizing power consumption, reducing heat generation, and contributing to energy efficiency.
  • Advanced Packaging: Features advanced packaging technology, ensuring reliable performance, efficient heat dissipation, and enhanced signal integrity.

Benefits

  • Improved System Performance: Enables faster data access, resulting in quicker application loading times and improved overall system responsiveness.
  • Reduced Power Consumption: Contributes to longer battery life in portable devices and lowers energy costs through efficient low-voltage operation.
  • Increased Memory Capacity: Provides ample memory capacity, allowing for seamless multitasking, efficient data handling, and the ability to run multiple applications concurrently.
  • Enhanced Reliability: Engineered for stable and reliable operation in a wide range of environments, ensuring consistent performance and data integrity.
  • Optimized for Versatile Use: Designed to meet diverse memory requirements in both consumer and industrial electronics, offering flexibility and adaptability in various applications.

Additional Details

The K4B1G1646G-BCK0T00 is a Double Data Rate 3 (DDR3) Synchronous Dynamic Random-Access Memory (SDRAM) chip, likely organized as 64M x 16 bits. It adheres to JEDEC standards for DDR3 memory. The precise timing characteristics, including CAS latency (CL), tRCD, and tRP, depend on the specific speed grade of the memory module it is installed on. It is generally mounted on DIMMs (Dual In-Line Memory Modules) used in computers.

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