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Same model may have multiple batches, images only for reference.
RS1L120GNTB Real Image
Same model may have multiple batches, images only for reference.

RS1L120GNTB

Part No RS1L120GNTB
Manufacturer Rohm Semiconductor
Catalog FETs - Single
Description RS1L120GN IS LOW ON - RESISTANCE
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Manufacturer Rohm Semiconductor
Packaging Reel
FET Type N-Channel
Technology MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss) 60V
Current - Continuous Drain (Id) at 25°C 12A , 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Rds On (Maximum) at Id, Vgs 12.7mOhm at 12A, 10V
Vgs(th) (Maximum) at Id 2.7V at 200μA
Gate Charge (Qg) (Maximum) at Vgs 26nC at 10V
Maximum Vgs ±20V
Input Capacitance (Ciss) (Maximum) at Vds 1330pF at 30V
Power Dissipation (Maximum) 3W
Temperature Range - Operating 150°C
Mounting Style SMD
Supplier Device Package 8-HSOP
Manufacturer Package 8-PowerTDFN
Manufacturer Pack Quantity 2,500
MSL Level 1 (Unlimited)
Popularity Medium
Supply and Demand Status Balance
Win Source Part Number 806057-RS1L120GNTB
Ultra Librarian 3D Model Ultra Librarian RS1L120GNTB CAD Model

Description

The Rohm Semiconductor RS1L120GNTB is a MOSFET electronic component.

  • Maximum Power Dissipation: 3W
  • Operating Temperature Range: Up to 150°C
  • Applications: N-Channel FET

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Pricing & Ordering

Quantity Unit Price Ext. Price
17+ $2.9655 $50.4135
42+ $2.4332 $102.1944
64+ $2.3572 $150.8608
88+ $2.2812 $200.7456
114+ $2.2051 $251.3814
152+ $1.9770 $300.5040
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,500 pieces
MOQ: 17 pcs
Order Increment : 1 pcs
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