The 2SD2011 is a silicon NPN epitaxial planar transistor from Rohm Semiconductor. It is designed for switching and amplifier applications. It offers a good balance of current handling capability, breakdown voltage, and switching speed.
Applications:
- Switching Regulators
- DC-DC Converters
- Motor Drivers
- Relay Drivers
- General Purpose Amplification
Features:
- High Collector Current (IC = 3A): Suitable for moderate current switching.
- Low Saturation Voltage (VCE(sat)): Minimizes power dissipation during switching.
- High Collector-Emitter Breakdown Voltage (VCEO = 80V): Provides a good safety margin.
- Fast Switching Speed: Enables efficient operation in higher frequency circuits.
- TO-251/TO-252 Package: Allows for surface mounting.
Benefits:
- Efficient Power Control: The combination of high collector current and low saturation voltage provides efficient power control.
- Enhanced Reliability: The high breakdown voltage provides a safety margin against voltage spikes.
- Improved System Performance: The fast switching speed enables better performance in switching applications.
- Reduced Power Dissipation: Low saturation voltage reduces heat generation.
- Surface Mount Design: Facilitates automated assembly and smaller PCB designs.
Additional Details:
The 2SD2011 is suitable for a wide range of applications requiring a reliable and efficient switching transistor.
Technical Specifications:
- Polarity: NPN
- Collector-Emitter Voltage (VCEO): 80V
- Collector Current (IC): 3A
- Base Current (IB): 0.5A
- Collector Dissipation (PC): 20W
- Operating Temperature Range: -55°C to +150°C
- Package Type: TO-251/TO-252
