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Same model may have multiple batches, images only for reference.
RJH65T04BDPM-A0#T2
Same model may have multiple batches, images only for reference.

RJH65T04BDPM-A0#T2

Part No RJH65T04BDPM-A0#T2
Manufacturer Renesas Electronics America
Catalog IGBTs - Single
Description ABU / IGBT / IGBT Trench 650 V 60 A 65 W Through Hole TO-3PFP
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Mfr Renesas Electronics America Inc
Package Tube
IGBT Type Trench
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 60 A
Vce(on) (Max) @ Vge, Ic 1.95V @ 15V, 30A
Power - Max 65 W
Switching Energy 360µJ (on), 350µJ (off)
Input Type Standard
Gate Charge 74 nC
Td (on/off) @ 25°C 35ns/125ns
Test Condition 400V, 30A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating 175°C (TJ)
Mounting Type Through Hole
Package / Case SC-94
Supplier Device Package TO-3PFP
MSL Level 1 (Unlimited)
ECCN EAR99
HTSUS 8541.29.0095
Other Names 559-RJH65T04BDPM-A0#T2,-1161-RJH65T04BDPM-A0#T2
Standard Package 25
Win Source Part Number 1165684-RJH65T04BDPM-A0#T2
Ultra Librarian 3D Model Ultra Librarian RJH65T04BDPM-A0#T2 CAD Model

Description

The Renesas Electronics America Inc 1165684-RJH65T04BDPM-A0#T2 is a single IGBT transistor that has a maximum power capacity of 65W.

  • Power Capacity: 65W
  • Voltage Breakdown: 650V
  • Maximum Collector Current: 60A
  • IGBT Type: Trench
  • Mounting Type: Through-Hole
  • ECCN: EAR99
  • HTSUS: 8541.29.0095
  • Switching Energy (On): 360μJ
  • Switching Energy (Off): 350μJ
  • Gate Charge: 74nC

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