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71V65603S133BGGI

Part No 71V65603S133BGGI
Manufacturer Renesas Electronics America
Catalog Memory
Description IC SRAM 9MBIT PARALLEL 119PBGA / SRAM - Synchronous, SDR (ZBT) Memory IC 9Mbit Parallel 133 MHz 4.2 ns 119-PBGA (14x22)
Datasheet
Sample
Rohs State rohs
ECAD Module
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Products specifications Report Issue?

Category Integrated Circuits (ICs)>Memory>Memory
Mfr Renesas Electronics America
Series -
Package Tray
Memory Type Volatile
Memory Format SRAM
Technology SRAM - Synchronous, SDR (ZBT)
Memory Size 9Mbit
Memory Organization 256K x 36
Memory Interface Parallel
Clock Frequency 133 MHz
Write Cycle Time - Word, Page -
Access Time 4.2 ns
Voltage - Supply 3.135V ~ 3.465V
Temperature Range - Operating -40°C ~ 85°C (TA)
Mounting Type Surface Mount
Package / Case 119-BGA
Supplier Device Package 119-PBGA (14x22)
Base Product Number 71V65603
Moisture Sensitivity Level (MSL) 3 (168 Hours)
REACH Status REACH Unaffected
ECCN 3A991B2A
HTSUS 8542.32.0041
Standard Package 84 pcs
Win Source Part Number 1381053-71V65603S133BGGI
Ultra Librarian 3D Model Ultra Librarian 71V65603S133BGGI CAD Model

Description

The 1381053-71V65603S133BGGI is a memory component designed for use in electronic devices and manufactured by Renesas Electronics America.

  • Category: Integrated Circuits (ICs)
  • Classification: Memory
  • Memory Type: Synchronous SRAM
  • Memory Size: 9Mbit
  • Access Time: 4.2 ns
  • Voltage Supply: 3.135V to 3.465V
  • Package Type: 119-BGA
  • Mounting Type: Surface Mount
  • Operating Temperature: -40°C to 85°C
  • Memory Format: SRAM
  • Memory Interface: Parallel
  • Status: Not Obsolete
  • Moisture Sensitivity Level: 3 (168 Hours)
  • Memory Organization: 256K x 36

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