The 3SK241-R is a VHF/UHF Low Noise Amplifier N-Channel Dual Gate MOS Field Effect Transistor manufactured by Panasonic. It is designed for use in high-frequency amplifier circuits, offering excellent gain and low noise characteristics.

Applications

• VHF/UHF low noise amplifiers
• TV tuners
• Radio receivers
• Communication equipment
• RF front-end circuits

Features

• High power gain: Gp = 24 dB (typ.) at f = 200 MHz
• Low noise figure: NF = 1.0 dB (typ.) at f = 200 MHz
• High cut-off frequency: fT = 1.2 GHz (typ.)
• Dual gate structure for improved performance
• Small signal amplifier

Benefits

• Provides high gain with minimal noise
• Improves receiver sensitivity
• Enables high-frequency signal amplification
• Enhances signal quality in communication systems
• Offers stable and reliable performance

Additional Details

The Panasonic 3SK241-R is commonly used in RF receiver front-end circuits to amplify weak signals while minimizing noise. Its dual-gate structure allows for better control of the transistor's characteristics and reduces feedback capacitance. This MOSFET transistor is suitable for both discrete and hybrid circuit designs. It is typically biased in a common-source configuration for optimal performance. This device's low noise figure and high gain make it ideal for use in sensitive receiver applications.

The 3SK241-R transistor is often used in TV tuners and radio receivers to amplify the incoming signal before it is processed by the receiver circuitry. Its high cut-off frequency allows it to be used in a wide range of high-frequency applications.