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SMBT3946DW1T1G

Part No SMBT3946DW1T1G
Manufacturer ON Semiconductor
Catalog Transistors (BJT) - Arrays
Description TRANS NPN/PNP 40V 0.2A SC88
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Reel - TR
Status Active
Transistor Polarity NPN, PNP
Maximum Current Collector 200mA
VCEO Maximum Collector-Emitter Breakdown Voltage 40V
Max Vce (sat) 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
Typical Gain (hFE) (Min) 100 @ 10mA, 1V
Maximum Power Dissipation 150mW
Frequency - Transition 300MHz, 250MHz
Temperature Range - Operating -55°C to 150°C (TJ)
Mounting SMD (SMT)
Case / Package SC-88/SC70-6/SOT-363
Win Source Part Number 1097899-SMBT3946DW1T1G
Popularity Medium
Supply and Demand Status Sufficient
Ultra Librarian 3D Model Ultra Librarian SMBT3946DW1T1G CAD Model

Description

The ON Semiconductor SMBT3946DW1T1G is a high-performance, dual bipolar transistor that combines two NPN transistors in a single SOT-363 package. This compact and versatile component is designed to meet the needs of a wide range of applications, offering both space-saving and power efficiency advantages.

Key Features

  • Device Type: Dual Bipolar Junction Transistors (BJT)
  • Configuration: Dual NPN
  • Package: SOT-363, a surface-mount, small outline package that is ideal for automated assembly processes.
  • Collector-Emitter Voltage (Vceo): 40V, providing ample voltage handling capability for a range of circuits.
  • Collector Current (Ic): 200mA, suitable for driving moderate loads.
  • DC Current Gain (hFE): 100 to 300, ensuring reliable amplification performance.
  • Transition Frequency (fT): 250MHz, offering excellent frequency response for high-speed applications.
  • Power Dissipation: 300mW, allowing the device to handle a reasonable amount of power without overheating.

Applications

The SMBT3946DW1T1G is commonly used in a variety of electronic circuits and applications, such as:

  • Signal processing
  • Amplification stages
  • Switching applications
  • Audio preamplifiers
  • Driver stages in audio and signal amplifiers
  • General-purpose switching and amplification

Advantages

Integrating two NPN transistors into a single package, the SMBT3946DW1T1G offers several advantages:

  • Space Efficiency: The dual transistor configuration reduces the number of components and board space required, making it ideal for compact electronic designs.
  • Power Efficiency: With its optimized power dissipation and high current gain, the device ensures efficient operation, which is crucial for battery-powered applications.
  • Performance: High transition frequency makes this component suitable for high-speed and high-frequency applications, ensuring a broad range of usability.
  • Convenience: The SOT-363 package is widely used and easy to integrate into various PCB designs, simplifying the design and manufacturing process.

The ON Semiconductor SMBT3946DW1T1G is a reliable choice for designers looking for a dual NPN transistor that offers both performance and practicality in a compact form factor.

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Pricing & Ordering

Quantity Unit Price Ext. Price
980+ $0.0511 $50.0780
2,390+ $0.0419 $100.1410
3,695+ $0.0406 $150.0170
5,090+ $0.0393 $200.0370
6,580+ $0.0380 $250.0400
8,800+ $0.0341 $300.0800
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 999,000 pieces
MOQ: 980 pcs
Order Increment : 1 pcs
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