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NXH25C120L2C2SG

Part No NXH25C120L2C2SG
Manufacturer ON Semiconductor
Catalog IGBTs - Modules
Description IGBT MODULE, CIB 1200 V, 25 A IG
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Transistors - IGBTs - IGBT Modules
Mfr onsemi
Series -
Package Tube
Product Status Active
IGBT Type -
Configuration Three Phase Inverter with Brake
Voltage - Collector Emitter Breakdown (Max) 1200 V
Current - Collector (Ic) (Max) 25 A
Power - Max 20 mW
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 25A
Current - Collector Cutoff (Max) 250 µA
Input Capacitance (Cies) @ Vce 6.2 nF @ 20 V
Input Three Phase Bridge Rectifier
NTC Thermistor Yes
Temperature Range - Operating -40°C ~ 150°C (TJ)
Mounting Type Through Hole
Package / Case 26-PowerDIP Module (1.199", 47.20mm)
Supplier Device Package 26-DIP
Base Product Number NXH25
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 1373009-NXH25C120L2C2SG
Ultra Librarian 3D Model Ultra Librarian NXH25C120L2C2SG CAD Model

Description

ON Semiconductor NXH25C120L2C2SG Product Overview

The NXH25C120L2C2SG is a high-performance Silicon Carbide (SiC) Power Module designed and manufactured by ON Semiconductor, a leading name in energy-efficient innovations. This power module is engineered to cater to the demanding requirements of high-power systems where efficiency and reliability are paramount.

The SiC technology embedded within the NXH25C120L2C2SG offers superior characteristics compared to traditional silicon-based devices. These include higher thermal conductivity, greater electron mobility, and the ability to operate at higher temperatures. The result is a module that provides improved efficiency, faster switching speeds, and reduced thermal management issues.

With a voltage rating of 1200V and a current rating of 25A, the NXH25C120L2C2SG is well-suited for a variety of applications, including but not limited to electric vehicles (EVs), solar inverters, uninterruptible power supplies (UPS), and high-performance power conversion systems. Its compact, low-inductance package design minimizes energy losses and simplifies system integration.

The module features a half-bridge configuration with low reverse recovery charge (Qrr) and low intrinsic capacitance, which further enhances its efficiency and performance. It also includes built-in body diodes that are optimized for fast recovery and minimal forward voltage, ensuring that the power module can handle the rigorous conditions of power switching with ease.

ON Semiconductor has equipped the NXH25C120L2C2SG with robust and reliable terminal connections, ensuring secure and consistent electrical contacts. The module's high isolation voltage capability ensures safe operation, even under extreme electrical stress. Additionally, the product is RoHS compliant, demonstrating ON Semiconductor's commitment to environmental responsibility and the reduction of hazardous substances in electronic components.

In summary, the NXH25C120L2C2SG from ON Semiconductor is a state-of-the-art power module that stands out for its efficiency, durability, and performance. It is an excellent choice for designers and engineers looking to leverage the advantages of SiC technology in their power management and conversion applications.

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