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NVH4L160N120SC1

Part No NVH4L160N120SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SICFET N-CH 1200V 17.3A TO247
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1201985-NVH4L160N120SC1
Manufacturer onsemi
Category Discrete Semiconductor Products -Transistors -FETs, MOSFETs- Single FETs, MOSFETs
Series Automotive, AEC-Q101
Package Tube
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 1200 V
Drive Voltage (Max Rds On, Min Rds On) 20V
Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
Ultra Librarian 3D Model Ultra Librarian NVH4L160N120SC1 CAD Model

Description

Product Overview: NVH4L160N120SC1

The NVH4L160N120SC1 is a state-of-the-art silicon carbide (SiC) N-channel MOSFET brought to you by ON Semiconductor. This high-performance power semiconductor is designed to meet the rigorous demands of energy-efficient and compact power supply systems. The device is a testament to ON Semiconductor's commitment to providing innovative solutions that enable energy savings and higher power density in a variety of applications.

Key Features

  • High Voltage Capability: With a drain-to-source voltage (VDS) of 1200V, the NVH4L160N120SC1 is suitable for high voltage applications, providing robust performance in challenging environments.
  • Low On-Resistance: The device boasts a low on-resistance (RDS(on)) of 160 mΩ, which minimizes conduction losses and improves overall efficiency, making it ideal for high-efficiency power systems.
  • SiC Technology: Leveraging the benefits of silicon carbide, this MOSFET offers superior thermal performance, faster switching speeds, and reduced switching losses compared to traditional silicon-based MOSFETs.
  • High Temperature Operation: Engineered to withstand high operating temperatures, the NVH4L160N120SC1 ensures reliable performance even under extreme conditions.

Applications

The NVH4L160N120SC1 is versatile and can be utilized in a wide range of applications, including:

  • Power supply units
  • Electric vehicle (EV) chargers
  • Solar inverters
  • Industrial motor drives
  • High-voltage DC/DC converters

Quality and Reliability

ON Semiconductor's NVH4L160N120SC1 is manufactured with a focus on quality and reliability. The device is rigorously tested to ensure it meets the highest industry standards, providing confidence to designers and engineers integrating this MOSFET into their systems.

Environmental Impact

Committed to sustainability, ON Semiconductor ensures that the NVH4L160N120SC1 is produced with environmentally friendly processes. The device's efficiency contributes to reduced energy consumption and a lower carbon footprint for end-user applications.

For detailed technical specifications, application notes, and support resources, please refer to the official ON Semiconductor documentation for the NVH4L160N120SC1.

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Pricing & Ordering

Quantity Unit Price Ext. Price
4+ $13.1856 $52.7424
9+ $12.3350 $111.0150
13+ $11.9096 $154.8248
19+ $11.0589 $210.1191
24+ $10.6336 $255.2064
30+ $10.2083 $306.2490
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Availability: 900 pieces
MOQ: 4 pcs
Order Increment : 1 pcs
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