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NTBG045N065SC1

Part No NTBG045N065SC1
Manufacturer ON Semiconductor
Catalog FETs - Single
Description SILICON CARBIDE MOSFET, NCHANNEL
Datasheet
Sample
Rohs State rohs
ECAD Module
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Win Source Part Number WS1201998-NTBG045N065SC1
Manufacturer onsemi
Category Discrete Semiconductor Products -Transistors- FETs, MOSFETs -Single FETs, MOSFETs
Package Tape & Reel (TR) Cut Tape (CT)
Product Status Active
FET Type N-Channel
Technology SiCFET (Silicon Carbide)
Drain to Source Voltage (Vdss) 650 V
Operating Temperature -55°C ~ 175°C (TJ)
Mounting Type Surface Mount
Supplier Device Package D2PAK-7
Ultra Librarian 3D Model Ultra Librarian NTBG045N065SC1 CAD Model

Description

ON Semiconductor NTBG045N065SC1: A Robust SiC Power MOSFET

The NTBG045N065SC1 is a cutting-edge silicon carbide (SiC) power MOSFET designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This high-performance transistor is specifically engineered for applications that demand high efficiency, fast switching, and exceptional thermal performance. The NTBG045N065SC1 is an ideal choice for a wide range of power systems, from electric vehicles (EVs) and renewable energy inverters to high-performance computing and industrial power supplies.

Key Features of NTBG045N065SC1:

  • Low On-Resistance: With an RDS(on) of only 45 mΩ, this MOSFET minimizes conduction losses, making it highly efficient for power conversion applications.
  • High Blocking Voltage: The device is rated for a drain-source voltage (VDS) of 650V, providing a robust solution for high-voltage circuits.
  • Fast Switching Speed: The fast intrinsic diode with low reverse recovery charge (Qrr) ensures rapid switching, which is crucial for reducing switching losses and improving the power density of electronic systems.
  • Enhanced Thermal Performance: The SiC material properties allow for superior thermal conductivity, enabling the MOSFET to handle high temperatures and maintain performance under demanding conditions.
  • Reduced Parasitic Inductances: The package design minimizes parasitic inductances, which is beneficial for high-speed switching and reduces the likelihood of erratic behavior in the circuit.

Applications:

The NTBG045N065SC1 is versatile and can be utilized in a variety of applications, including:

  • Electric vehicle (EV) powertrains and charging systems
  • Solar inverters and energy storage systems
  • Uninterruptible power supplies (UPS)
  • Switch-mode power supplies (SMPS)
  • Motor drives and high-performance power converters

ON Semiconductor's NTBG045N065SC1 is more than just a component; it's a solution that offers reliability, efficiency, and performance. By integrating this SiC MOSFET into your power management designs, you can expect reduced system costs, enhanced longevity, and an overall boost in energy efficiency. This product exemplifies ON Semiconductor's commitment to leading the way in power semiconductor technology, enabling a future of greener and more reliable electronics.

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Pricing & Ordering

Quantity Unit Price Ext. Price
5+ $12.6730 $63.3650
12+ $10.3985 $124.7820
18+ $10.0734 $181.3212
24+ $9.7486 $233.9664
31+ $9.4236 $292.1316
42+ $8.4487 $354.8454
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 492 pieces
MOQ: 5 pcs
Order Increment : 1 pcs
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