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NSR01301MX4T5G

Part No NSR01301MX4T5G
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Single
Description 01005_TRENCH_SCHOTTKY_30V / Diode
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Diodes - Rectifiers - Single
Manufacturer onsemi
Packaging Reel - TR
Base Product Number NSR013
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
HTSUS 0000.00.0000
Standard Package 10,000
Win Source Part Number 1325599-NSR01301MX4T5G
Ultra Librarian 3D Model Ultra Librarian NSR01301MX4T5G CAD Model

Description

The NSR01301MX4T5G from ON Semiconductor is a high-performance, energy-efficient N-channel MOSFET designed for a wide range of applications. This semiconductor device is well-suited for use in power management tasks, particularly in portable and battery-powered devices where power consumption is a critical concern.

Key Features

  • Low On-Resistance: The NSR01301MX4T5G boasts a very low on-resistance (RDS(on)), which translates to reduced power loss and improved efficiency during operation.
  • High-Speed Switching: With its fast switching capabilities, this MOSFET is ideal for high-frequency applications, ensuring that devices can operate more efficiently and with better performance.
  • Low Threshold Voltage: The device operates at a low threshold voltage, making it particularly suitable for low voltage applications and enabling it to be driven by low-power control circuits.
  • Small Package Size: The NSR01301MX4T5G comes in a compact SOT-723 package, which is excellent for space-constrained applications, allowing for high-density PCB layouts.
  • High Reliability: Manufactured by ON Semiconductor, a leader in the semiconductor industry, this product is built to high-quality standards, ensuring reliability and longevity in demanding environments.

Applications

The NSR01301MX4T5G is versatile and can be used in various applications, including:

  • Power Management Circuits
  • Battery-Powered Systems
  • DC/DC Converters
  • Load Switches
  • Portable Electronic Devices
  • Energy Harvesting

Technical Specifications

Parameter Value
Drain-Source Voltage (VDS) 20V
Gate-Source Voltage (VGS) ±8V
Continuous Drain Current (ID) 230mA
Power Dissipation (PD) 150mW
Operating Temperature Range -55°C to +150°C

For detailed product information, technical specifications, and application support, please visit ON Semiconductor's official website or contact their customer support team.

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Pricing & Ordering

Quantity Unit Price Ext. Price
435+ $0.1158 $50.3730
1,055+ $0.0951 $100.3305
1,630+ $0.0921 $150.1230
2,245+ $0.0891 $200.0295
2,905+ $0.0862 $250.4110
3,890+ $0.0772 $300.3080
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 870 pieces
MOQ: 435 pcs
Order Increment : 1 pcs
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