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NRVBD660CTG

Part No NRVBD660CTG
Manufacturer ON Semiconductor
Catalog Diodes, Rectifiers - Arrays
Description DIODE ARRAY SCHOTTKY 60V 3A DPAK / Diode Array 1 Pair Common Cathode 60 V 3A Surface Mount TO-252-3, DPak (2 Leads + Tab), SC-63
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products - Diodes - Rectifiers - Diode Arrays
Mfr ON Semiconductor
Series Automotive, AEC-Q101, SWITCHMODE™
Package Tube
Product Status Obsolete
Diode Configuration 1 Pair Common Cathode
Technology Schottky
Voltage - DC Reverse (Vr) (Max) 60 V
Current - Average Rectified (Io) (per Diode) 3A
Voltage - Forward (Vf) (Max) @ If 700 mV @ 3 A
Speed Fast Recovery =< 500ns, > 200mA (Io)
Current - Reverse Leakage @ Vr 100 µA @ 60 V
Operating Temperature - Junction -65°C ~ 175°C
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Supplier Device Package DPAK
Base Product Number NRVBD660
Standard Package 75 pcs
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.10.0080
Win Source Part Number 649480-NRVBD660CTG
Ultra Librarian 3D Model Ultra Librarian NRVBD660CTG CAD Model

Description

ON Semiconductor NRVBD660CTG Power Rectifier

The ON Semiconductor NRVBD660CTG is a high-performance Schottky barrier rectifier designed for applications requiring efficient and reliable power conversion. This robust component is housed in a TO-220 package, offering a compact and durable solution for engineers and designers working on power supply and energy management systems.

Key Features

  • High Surge Capability: The NRVBD660CTG can handle high surge currents, making it suitable for applications that experience short bursts of high power demand.
  • Low Forward Voltage Drop: It features a low forward voltage drop, which enhances system efficiency by reducing power losses during operation.
  • High Junction Temperature: With a maximum operating junction temperature of 175°C, this rectifier can withstand high-temperature environments, ensuring reliability and longevity.
  • Guard Ring Die Construction: The guard ring die construction provides enhanced ruggedness and long-term reliability, particularly important in harsh working conditions.

Applications

The NRVBD660CTG is ideal for a range of applications, including:

  • Switch-mode power supplies (SMPS)
  • DC-to-DC converters
  • Free-wheeling diodes
  • Power factor correction (PFC) circuits
  • Automotive applications
  • Reverse battery protection

Technical Specifications

Parameter Value
Average Rectified Forward Current 6 A
Peak Repetitive Reverse Voltage 60 V
Non-Repetitive Peak Surge Current 600 A
Operating Junction Temperature Range -65°C to +175°C
Package / Case TO-220

The NRVBD660CTG is a testament to ON Semiconductor's commitment to providing high-quality, reliable components for the electronics industry. Whether for industrial, automotive, or consumer applications, this rectifier ensures performance and efficiency, making it a preferred choice for engineers globally.

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Pricing & Ordering

Quantity Unit Price Ext. Price
60+ $1.0300 $61.8000
140+ $0.8452 $118.3280
215+ $0.8187 $176.0205
295+ $0.7923 $233.7285
380+ $0.7659 $291.0420
505+ $0.6867 $346.7835
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,400 pieces
MOQ: 60 pcs
Order Increment : 1 pcs
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