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NGTB75N65FL2WG

Part No NGTB75N65FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT TRENCH/FS 650V 100A TO247
Datasheet
Sample
Rohs State rohs
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Category Discrete Semiconductor Products - Transistors - IGBTs - Single IGBTs
Mfr ON Semiconductor
Package Tube
Product Status Active
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 200 A
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 75A
Power - Max 595 W
Switching Energy 1.5mJ (on), 1mJ (off)
Input Type Standard
Gate Charge 310 nC
Td (on/off) @ 25°C 110ns/270ns
Test Condition 400V, 75A, 10Ohm, 15V
Reverse Recovery Time (trr) 80 ns
Temperature Range - Operating -55°C ~ 175°C (TJ)
Mounting Type Through Hole
Package / Case TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB75
Standard Package 30 pcs
MSL Level Not Applicable
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Win Source Part Number 648477-NGTB75N65FL2WG
Ultra Librarian 3D Model Ultra Librarian NGTB75N65FL2WG CAD Model

Description

ON Semiconductor NGTB75N65FL2WG IGBT

The ON Semiconductor NGTB75N65FL2WG is a high-performance insulated gate bipolar transistor (IGBT) designed for a wide range of power applications. This IGBT is part of the Field Stop II series, offering superior performance in terms of efficiency, speed, and power handling capabilities.

With a robust 650V collector-emitter voltage (Vces) rating, the NGTB75N65FL2WG is well-suited for applications requiring high voltage operation. Its 75A collector current (Ic) rating ensures it can handle substantial power loads, making it ideal for use in inverters, converters, and energy generation systems.

This device features a low on-state voltage drop (Vce(on)) which enhances its efficiency by reducing conduction losses. The NGTB75N65FL2WG also boasts a high-speed switching capability, which is crucial for reducing switching losses and improving overall system performance in high-frequency applications.

ON Semiconductor has engineered the NGTB75N65FL2WG with a Field Stop layer that increases carrier mobility while minimizing turn-off energy, providing a faster and more efficient switching process. This technology also contributes to the device's high current handling capacity and low thermal resistance, ensuring reliable operation even under strenuous conditions.

The NGTB75N65FL2WG comes in a TO-247 package, which is known for its excellent thermal properties and mechanical robustness. This package allows for effective heat dissipation, ensuring the IGBT operates within its temperature specifications and enhancing its longevity.

Additional features of this IGBT include a positive temperature coefficient, which simplifies device paralleling, and a maximum junction temperature of 175°C, providing a wide operating temperature range. These characteristics make the NGTB75N65FL2WG a versatile and reliable choice for designers looking to optimize their power circuitry across various industries.

Whether it's for renewable energy systems, motor drives, power supplies, or any other high-power switching application, the ON Semiconductor NGTB75N65FL2WG IGBT offers a combination of efficiency, reliability, and performance that engineers and technicians can depend on.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $4.1788 $58.5032
34+ $3.4292 $116.5928
53+ $3.3218 $176.0554
72+ $3.2144 $231.4368
93+ $3.1081 $289.0533
125+ $2.7859 $348.2375
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 2,010 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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