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NGTB40N135IHRWG

Part No NGTB40N135IHRWG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description Monolithic Free Wheeling Diode | IGBT 1350V 80A 394W TO247
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube
IGBT Type Trench Field Stop
Voltage - Collector Emitter Breakdown (Maximum) 1350V
Current - Collector (Ic) (Maximum) 80A
Current - Collector Pulsed (Icm) 120A
Vce(on) (Maximum) at Vge, Ic 2.7V at 15V, 40A
Maximum Power 394W
Switching Energy 1.3mJ (off)
Input Type Standard
Gate Charge 234nC
Td (on/off) at 25°C -/250ns
Test Condition 600V, 40A, 10Ohm, 15V
Temperature Range - Operating -40°C ~ 175°C
Mounting Style Through Hole
Manufacturer Package TO-247-3
Supplier Device Package TO-247
Manufacturer Pack Quantity 30
MSL Level 1 (Unlimited)
Win Source Part Number 715604-NGTB40N135IHRWG
Popularity Medium
Supply and Demand Status Balance
Ultra Librarian 3D Model Ultra Librarian NGTB40N135IHRWG CAD Model

Description

ON Semiconductor NGTB40N135IHRWG - High-Performance IGBT

The NGTB40N135IHRWG is a state-of-the-art insulated gate bipolar transistor (IGBT) designed and manufactured by ON Semiconductor, a leader in energy-efficient innovations. This IGBT is engineered to offer a high level of performance in power switching applications, making it ideal for a variety of uses including motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial applications.

Key Features:

  • High Current Rating: With a continuous collector current (Ic) of 40A and a pulsed collector current of 80A, this IGBT can handle significant power levels, making it suitable for high-power applications.
  • High Voltage Capability: The device is rated for a collector-emitter voltage (Vce) of 1350V, providing a wide safety margin for applications with high voltage requirements.
  • Low On-Resistance: The NGTB40N135IHRWG boasts a low on-state voltage, which translates to reduced conduction losses and improved efficiency in power conversion.
  • Fast Switching Speed: The IGBT offers fast switching characteristics, which minimizes switching losses and allows for efficient operation at high frequencies.
  • Co-Packaged Diode: This IGBT comes with a co-packaged fast recovery diode, which provides protection against reverse voltage and enhances the overall performance of the power circuit.

Advanced Technology:

Utilizing ON Semiconductor's proprietary trench gate field-stop technology, the NGTB40N135IHRWG offers an optimal balance between conduction and switching losses, leading to increased efficiency and thermal performance. This technology also contributes to the device's robustness and reliability under varying operating conditions.

Package and Environmental Compliance:

The NGTB40N135IHRWG comes in a TO-247 package, which is known for its high power dissipation capability. Additionally, the product is compliant with RoHS regulations, making it an environmentally friendly choice for customers looking to meet current green standards in electronic components.

Conclusion:

ON Semiconductor's NGTB40N135IHRWG IGBT is a powerful solution for designers seeking high efficiency, reliability, and performance. With its advanced features and robust design, it stands as an ideal choice for demanding power applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
12+ $5.0427 $60.5124
28+ $4.1384 $115.8752
44+ $4.0090 $176.3960
60+ $3.8796 $232.7760
77+ $3.7503 $288.7731
104+ $3.3622 $349.6688
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Availability: 9,490 pieces
MOQ: 12 pcs
Order Increment : 1 pcs
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