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NGTB30N60L2WG

Part No NGTB30N60L2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 600V 30A TO247 / IGBT 600 V 100 A 225 W Through Hole TO-247-3
Sample
Rohs State rohs
ECAD Module
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Category Discrete Semiconductor Products>Transistors - IGBTs - Single
Manufacturer onsemi
Packaging Tube
Product Status Obsolete
Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 100 A
Current - Collector Pulsed (Icm) 60 A
Vce(on) (Max) @ Vge, Ic 1.6V @ 15V, 30A
Power - Max 225 W
Switching Energy 310µJ (on), 1.14mJ (off)
Input Type Standard
Gate Charge 166 nC
Td (on/off) @ 25°C 100ns/390ns
Test Condition 300V, 30A, 30Ohm, 15V
Reverse Recovery Time (trr) 70 ns
Temperature Range - Operating 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Supplier Device Package TO-247-3
Base Product Number NGTB30
RoHS Status ROHS3 Compliant
MSL Level 1 (Unlimited)
REACH Status REACH Unaffected
ECCN EAR99
HTSUS 8541.29.0095
Other Part Number 1990-NGTB30N60L2WG
Standard Package 30
Win Source Part Number 1324502-NGTB30N60L2WG
Ultra Librarian 3D Model Ultra Librarian NGTB30N60L2WG CAD Model

Description

The NGTB30N60L2WG is a state-of-the-art IGBT (Insulated Gate Bipolar Transistor) developed by ON Semiconductor, a leader in energy-efficient innovations. This high-performance IGBT is designed to meet the demanding requirements of a wide range of power electronic applications, including motor drives, uninterruptible power supplies (UPS), solar inverters, and industrial automation systems.

Key Features

  • Current Capacity: The device is capable of conducting up to 30A of continuous current, making it suitable for high-power applications.
  • Voltage Rating: With a collector-to-emitter voltage rating of 600V, it can handle significant voltage without breakdown, contributing to the durability and reliability of the systems it is used in.
  • Low On-State Voltage: The IGBT features a low on-state voltage drop which enhances its efficiency by minimizing conduction losses.
  • Fast Switching Speed: It offers fast switching characteristics, which help in reducing switching losses and improving overall system performance.
  • Co-Packaged Diode: This IGBT comes with a co-packaged free-wheeling diode that provides a robust and compact design solution.

Performance Benefits

The NGTB30N60L2WG is designed to optimize system performance through its combination of high efficiency, fast switching, and thermal stability. Its low conduction and switching losses make it an ideal choice for applications where energy efficiency is critical. Additionally, the device's ruggedness and high voltage capability contribute to the reliability and longevity of the applications it powers.

Package and Quality

The device is packaged in a TO-247 long leads package, which is known for its high thermal performance and is widely used in high-power applications. ON Semiconductor's commitment to quality ensures that the NGTB30N60L2WG meets the highest standards, making it a trusted component for engineers and designers.

Applications

  • Motor Drives
  • Uninterruptible Power Supplies (UPS)
  • Solar Inverters
  • Industrial Automation
  • Power Factor Correction Circuits

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Pricing & Ordering

Quantity Unit Price Ext. Price
9+ $7.1513 $64.3617
20+ $5.8678 $117.3560
31+ $5.6844 $176.2164
42+ $5.5010 $231.0420
55+ $5.3178 $292.4790
73+ $4.7676 $348.0348
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Availability: 3,500 pieces
MOQ: 9 pcs
Order Increment : 1 pcs
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