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NGTB25N120FL2WG

Part No NGTB25N120FL2WG
Manufacturer ON Semiconductor
Catalog IGBTs - Single
Description IGBT 1200V 25A TO247-3
Datasheet
Sample
Rohs State rohs
ECAD Module
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Categories Discrete Semiconductor Products
Manufacturer ON Semiconductor
Packaging Tube/Rail
Status Active
IGBT Type Field Stop
VCEO Maximum Collector-Emitter Breakdown Voltage 1200V
Maximum Current Collector 50A
Pulsed Collector Current 100A
Collector-emitter saturation voltage(Max) 2.4V @ 15V, 25A
Maximum Power Dissipation 385W
Total Switching Energy(Ets) 1.95mJ (on), 600μJ (off)
Input Type Standard
Gate Charge 178nC
Turn-on and Turn-off delay time 87ns/179ns
Testing Conditions 600V, 25A, 10 Ohm, 15V
Reverse Recovery Time (trr) 154ns
Temperature Range - Operating -55°C to 175°C (TJ)
Mounting Through Hole
Case / Package TO-247-3
Win Source Part Number 209162-NGTB25N120FL2WG
Popularity Medium
Supply and Demand Status Limited
Quantity per package 30
Ultra Librarian 3D Model Ultra Librarian NGTB25N120FL2WG CAD Model

Description

ON Semiconductor NGTB25N120FL2WG IGBT

The ON Semiconductor NGTB25N120FL2WG is a state-of-the-art Insulated Gate Bipolar Transistor (IGBT) that offers a perfect blend of high efficiency and fast switching performance, making it an ideal choice for a wide range of power applications. This IGBT is designed to handle significant power levels while maintaining low conduction and switching losses, which is crucial for energy-sensitive systems.

Key Features

  • High Current Capability: With a continuous collector current rating of 25A at 25°C, this IGBT can handle high power applications with ease.
  • High Voltage Rating: The device is rated for a maximum collector-emitter voltage of 1200V, providing a wide safety margin for applications with high voltage requirements.
  • Low On-State Voltage Drop (Vce(sat)): The low on-state voltage drop helps in reducing power dissipation and increases efficiency during conduction.
  • Fast Switching Speed: The NGTB25N120FL2WG boasts fast switching characteristics, which are essential for reducing switching losses and improving performance in high-frequency applications.
  • Co-Packaged Free Wheeling Diode: The inclusion of a free wheeling diode co-packaged with the IGBT simplifies design and enhances performance in applications requiring a diode for inductive load management.
  • High Input Impedance: The high input impedance signifies that the gate drive circuitry can be simpler and less power-hungry.
  • Robust Temperature Performance: This IGBT is designed to perform reliably over a wide temperature range, ensuring stable operation under varying environmental conditions.

Applications

The NGTB25N120FL2WG is well-suited for a variety of applications including:

  • Inverters and Converters
  • Uninterruptible Power Supplies (UPS)
  • Motor Drives
  • Induction Heating
  • Renewable Energy (Solar Inverters, Wind Turbines)

With its robust design and advanced features, the ON Semiconductor NGTB25N120FL2WG IGBT is an excellent choice for designers looking to improve system performance while reducing energy consumption. Whether it's for industrial drives, power management, or renewable energy systems, this IGBT provides a reliable and efficient solution for high-power switching applications.

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Pricing & Ordering

Quantity Unit Price Ext. Price
14+ $3.6187 $50.6618
30+ $3.3853 $101.5590
46+ $3.2686 $150.3556
66+ $3.0351 $200.3166
86+ $2.9184 $250.9824
108+ $2.8016 $302.5728
* Prices exclude shipping and taxes. Shipping costs are calculated at checkout.
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Availability: 12,000 pieces
MOQ: 14 pcs
Order Increment : 1 pcs
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